Effect of cooling rate in [(Fe0.5Co0.5)0.75B0.2Si0.05]100-xNbx alloy system on magnetic properties

The effect of cooling rate on the thermal stability and soft magnetic properties of [(Fe_0.5Co_0.5)_0.75B_0.2Si_0.05]_100-xNb_x (x = 5, 6, 7, 8 at. %) system was investigated. The alloys were produced into the form of ribbon and cylindrical rod by melt-spinning and injection casting, respectively. Their structure, thermal, mechanical and soft magnetic properties were investigated by x-ray diffraction, differential scanning calorimetry, universal testing machine and vibrating sample magnetometer, respectively. All of the alloys were identified as fully amorphous by X-ray diffraction. It turned out that the rod samples had exceptionally high saturation fields reaching 3.0 kOe, which is key properties for sensor application. Also, among these Fe,Co-based samples, the Fe_35.25 Co_35.25 B_18.8 Si_4.70 Nb₆ ribbon exhibits the highest saturation magnetization with 142.1 emu/g.     

Application of multi-buffer layer of (Zn,Mg)O/CdS in Cu2ZnSn(S,Se)4 solar cells

(Zn,Mg)O (ZMO) buffer layer has attracted attention for having the potential to control the conduction band offset of buffer layer and large band-gap (Eg) Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber interface, where the ZMO layer is deposited by the sputtering. However, the solar cell efficiency is decreased with the ZMO layer as compared with the CdS layer. The decrease in conversion efficiency is attributed to the sputtering damage on the absorber and high light reflection from the surfaces of CZTSSe solar cells. To completely suppress the damage, a CdS layer with very thin thickness of 20 nm is inserted between the ZMO layer and the CZTSSe layer. In addition, MgF₂ layers are deposited on CZTSSe solar cells as anti-reflection coating. Ultimately, the solar cell with multi-buffer layer of ZMO/thin-CdS is almost same level as that with the CdS layer. Therefore, the multi-buffer layer can be an appropriate buffer layer of the large-Eg CZTSSe layer.     

Effect of nanocrystallinity on lattice dynamics in Bi2Te3 based thermoelectrics

The lattice dynamics in as‐cast and nanocrystalline thermoelectric Bi₂Te₃ based p‐type and n‐type material were investigated using inelastic neutron scattering. Generalized densities of phonon states show substantial agreement between the lattice dynamics in as‐cast samples and previous studies. The lattice dynamics in the nanocrystalline materials differ significantly from its as‐cast counterparts in the acoustic phonon regime. In nanocrystalline p‐type and n‐type compounds, the average acoustic phonon group velocity was found to be reduced to 80(5)% and 95(2)% of the value in as‐cast material. It is argued that point‐defect and strain contrast scattering may play an important role for the understanding of lattice thermal conductivity in (nanocrystalline) Bi₂Te₃ based thermoelectrics beside the observed decrease of sound velocity. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Electroluminescence enhancement in ultraviolet organic light‐emitting diode with graded hole‐injection and ‐transporting structure

Electroluminescent intensity and external quantum efficiency (EQE) in ultraviolet organic light‐emitting diodes (UV OLEDs) have been remarkably enhanced by using a graded hole‐injection and ‐transporting (HIT) structure of MoO₃/N,N ′‐bis(naphthalen‐1‐yl)‐N,N ′‐bis(phenyl)‐benzidine/MoO₃/4,4′‐bis(carbazol‐9‐yl)biphenyl (CBP). The graded‐HIT based UV OLED shows superior short‐wavelength emis‐ sion with spectral peak of ～410 nm, maximum electroluminescent intensity of 2.2 mW/cm² at 215 mA/cm² and an EQE of 0.72% at 5.5 mA/cm². Impedance spectroscopy is employed to clarify the enhanced hole‐injection and ‐transporting capacity of the graded‐HIT structure. Our results provide a simple and effective approach for constructing efficient UV OLEDs. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Tm3+/Yb3 :LiYF4单晶的高效近红外量子剪裁及其在光伏电池中的应用

采用改进的坩埚下降法成功地生长了Tm/Yb共掺氟化钇锂单晶. 该单晶体具有每吸收一个蓝色光子并能发射出2个1000 nm近红外光子的下转换发光效应. 测定了样品的激发光谱、发射光谱和荧光衰减曲线. 在465 nm蓝光激发下观察到由Yb³⁺：²F_5/2→²F_7/2能级跃迁所致的960～1050 nm 波段的发射带,此发光带源于Tm³ 对Yb³ 离子的能量下转换过程. 应用Inokuti-Hirayama模型,研究了晶体的能量转换过程,结果表明Tm³ 向Yb³ 的能量传递是一个电偶极子相互作用机制过程. 当Tm³ 与Yb³ 离子的掺杂浓度为0.49mol%与5.99mol%时,单晶的量子剪裁效率达到最大值167.5%.     

O(1D)和CD4反应的准经典轨线

在新的全域势能面上, 用准经典轨线方法细致地研究了O(¹D)+CD₄多通道化学反应的动力学．这个势能面是用交换不变多项式方法基于MRC+Q/aug-cc-pVTZ从头算点拟合得到的．通过计算得到了产物OD+CD₃、D+CD₂OD/CD₃O和D₂+DCOD/D₂CO的分支比、平动能分布以及角度分布,结果显示理论与实验吻合得较好, 从而说明了这个反应的同位素取代效应很小． 研究表明,O(¹D)+CD₄反应是经过陷入的抽取机理发生的： 最初主要通过D原子的抽取,并不是之前人们认为的直接C-D键的插入形成CD3OD中间物后再进而解离成各个产物通道．     

通过双Σ型激光方案控制振动态布居转移

通过使用含时量子波包方法,对HF分子该类型的布居转移动力学进行了研究. 提出双Σ型激光控制方案,用于控制布居从|v=16>能级向|v=0>能级进行转移. 该方案的第一步是将布居从|v=16>经过中间能级|v=11>向|v=7>转移,第二步是将布居从|v=7>经过中间能级|v=3>向|v=0>转移. 在每一个步骤中,三个振动能级在两束重叠的激光脉冲作用下形成一个Σ型的布居转移路径. 通过优化激光的强度、频率和延迟时间,得到了最大的布居转移效率. 计算并比较了正序脉冲和反序脉冲两种情况,在这两种情况下,布居都可以超过90%从|v=16>能级向|v=0>能级进行转移.     

非晶碳氧化硅纳米线的合成与光致发光

利用直流电弧放电合成非晶碳氧化硅(SiCO)纳米线,不使用催化剂和模板,独立的SiCO 纳米线沉积在石墨锅的表面．通过XRD、SEM、TEM、XPS、FTIR等对SiCO纳米线进行了表征．结果表明,纳米线长度为20～100 μm,直径为10～100 nm,Si原子同C原子和氧原子分享成键组成SiCO单元．SiCO纳米线的光致发光谱在454和540 nm呈现了强而稳定的白色发光峰． SiCO纳米线的生长机制为等离子辅助气―固生长机制．     

Lattice structures and electronic properties of MO/MoSe2 interface from first-principles calculations

Using first-principles plane-wave calculations within density functional theory, we theoretically studied the atomic structure, bonding energy and electronic properties of the perfect Mo (110)/MoSe₂ (100) interface with a lattice mismatch less than 4.2%. Compared with the perfect structure, the interface is somewhat relaxed, and its atomic positions and bond lengths change slightly. The calculated interface bonding energy is about −1.2 J/m², indicating that this interface is very stable. The MoSe₂ layer on the interface has some interface states near the Fermi level, the interface states are mainly caused by Mo 4d orbitals, while the Se atom almost have no contribution. On the interface, Mo-5s and Se-4p orbitals hybridize at about −6.5 to −5.0 eV, and Mo-4d and Se-4p orbitals hybridize at about −5.0 to −1.0 eV. These hybridizations greatly improve the bonding ability of Mo and Se atom in the interface. By Bader charge analysis, we find electron redistribution near the interface which promotes the bonding of the Mo and MoSe₂ layer.